A hot hole-programmed and low-temperature-formed SONOS flash memory
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چکیده
منابع مشابه
A hot hole-programmed and low-temperature-formed SONOS flash memory
In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol-gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a notewor...
متن کاملA Novel Approach for the Understanding of the Charge Loss Paths in a SONOS Flash Memory
J. –H. Kuo, Y. H. Ho, and Steve S. Chung 1 Department of Electronics Engineering, National Chiao Tung University, Taiwan AbstractThe application of the three-level charge pumping technique to the SONOS flash memory has been demonstrated. It has been applied toward the understanding of the charge loss mechanism in a flash memory cell. Two different programming schemes have been used to demonstr...
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A new SONOS flash memory device with recess channel and side-gate was proposed and designed in terms of recess depth, doping profile, and side-gate length for sub-40 nm flash memory technology. The key features of the devices were characterized through 3-dimensional device simulation. This cell structure can store 2 or more bits of data in a cell when it is applied to NOR flash memory. It was s...
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The silicon-oxide-nitride-oxide-silicon (SONOS) device has been considering very promising candidate for future nonvolatile flash memory in terms of process compatibility with "oon"itio*f Compleirentary Metal Oxide Semiconductor (CMOS) technology, scalability, pnocess, prograrn/erase voltage, simplicity, and 2-bitlcell storage. To increase storage capacity_of a flash mernory, 2-bitlcell operati...
متن کاملCharge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices
Copyright ©2015 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. pISSN: 1229-7607 eISSN: 2092-7592 DOI: http://dx...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2013
ISSN: 1556-276X
DOI: 10.1186/1556-276x-8-340